SSM6H19NU,LF
MOSFET N-CH 40V 2A 6UDFN
part Number:
SSM6H19NU,LF
Alternative Model:
SSM6K217FE,LF,DMN31D5UDA-7B,TPS7A0525PDQNR,PMPB29XPE,115,SMMBFJ177LT1G,ISL91127IRNZ-T7A,NXFT15XH103FA2B100,DMP4025SFGQ-13,AO3422,LTST-FC12WEGBD-5A,LTST-S06WGEBD,TMUX1574RSVR,SSM3K339R,LF,MLPF-WB55-01E3,AP3012KTR-G1
manufacturer:
Toshiba Electronic Devices and Storage Corporation
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
MOSFET N-CH 40V 2A 6UDFN
RoHS:
YES
SSM6H19NU,LF specifications
Mounting Type:
Surface Mount
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±12V
Package / Case:
6-UDFN Exposed Pad
Power Dissipation (Max):
1W (Ta)
Current - Continuous Drain (Id) @ 25°C:
2A (Ta)
Vgs(th) (Max) @ Id:
1.2V @ 1mA
Supplier Device Package:
6-UDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 8V
Rds On (Max) @ Id, Vgs:
185mOhm @ 1A, 8V
Input Capacitance (Ciss) (Max) @ Vds:
130 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs:
2.2 nC @ 4.2 V
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:50377
quantity
unit price
International prices
3000
0.11
330
6000
0.1
600
9000
0.09
810
30000
0.09
2700
75000
0.09
6750
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