CSD23202W10T
MOSFET P-CH 12V 2.2A 4DSBGA
part Number：
CSD23202W10T
Alternative Model：
CSD23202W10,CSD23202W10
manufacturer：
Texas Instruments
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET P-CH 12V 2.2A 4DSBGA
RoHS：
YES
：
CSD23202W10T specifications
Mounting Type：
Surface Mount
Technology：
MOSFET (Metal Oxide)
Operating Temperature：
-55°C ~ 150°C (TJ)
FET Type：
P-Channel
Drain to Source Voltage (Vdss)：
12 V
Drive Voltage (Max Rds On, Min Rds On)：
1.5V, 4.5V
Vgs (Max)：
-6V
Power Dissipation (Max)：
1W (Ta)
Vgs(th) (Max) @ Id：
900mV @ 250µA
Current - Continuous Drain (Id) @ 25°C：
2.2A (Ta)
Supplier Device Package：
4-DSBGA (1x1)
Package / Case：
4-UFBGA, DSBGA
Gate Charge (Qg) (Max) @ Vgs：
3.8 nC @ 4.5 V
Rds On (Max) @ Id, Vgs：
53mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds：
512 pF @ 6 V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：17231
quantity
unit price
International prices
250
0.48
120
500
0.42
210
1250
0.42
525
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