CSD17579Q3AT
MOSFET N-CH 30V 20A 8VSON
part Number：
CSD17579Q3AT
Alternative Model：
CSD17579Q3A,CSD17579Q3A,RQ3E100BNTB,LT4293IDD#PBF,CSD17308Q3,RQ3E120BNTB,PMEG4010CEAX,A767MU226M2ALAE038,DMG1012T-7,DG2788ADN-T1-GE4,BSC320N20NS3GATMA1,218-2LPSTR,CMHZ5258B TR PBFREE,LT8309HS5#TRMPBF,SQ2310ES-T1_GE3,TPS3840DL31DBVRQ1
manufacturer：
Texas Instruments
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 30V 20A 8VSON
RoHS：
YES
：
CSD17579Q3AT specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Operating Temperature：
-55°C ~ 150°C (TJ)
Package / Case：
8-PowerVDFN
Drain to Source Voltage (Vdss)：
30 V
Current - Continuous Drain (Id) @ 25°C：
20A (Ta)
Gate Charge (Qg) (Max) @ Vgs：
15 nC @ 10 V
Vgs(th) (Max) @ Id：
1.9V @ 250µA
Supplier Device Package：
8-VSONP (3x3.3)
Rds On (Max) @ Id, Vgs：
10.2mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds：
998 pF @ 15 V
Power Dissipation (Max)：
3.2W (Ta), 29W (Tc)
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：6481
quantity
unit price
International prices
250
0.62
155
500
0.53
265
1250
0.53
662.5
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