RGT30NS65DGTL
IGBT TRENCH FIELD 650V 30A LPDS
part Number：
RGT30NS65DGTL
Alternative Model：
manufacturer：
ROHM Semiconductor
category：
Discrete Semiconductor Products >
Transistors >
IGBTs >
Single IGBTs >
describe：
IGBT TRENCH FIELD 650V 30A LPDS
RoHS：
YES
RGT30NS65DGTL specifications
Mounting Type：
Surface Mount
Operating Temperature：
-40°C ~ 175°C (TJ)
IGBT Type：
Trench Field Stop
Input Type：
Standard
Package / Case：
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Voltage - Collector Emitter Breakdown (Max)：
650 V
Supplier Device Package：
LPDS
Current - Collector (Ic) (Max)：
30 A
Current - Collector Pulsed (Icm)：
45 A
Vce(on) (Max) @ Vge, Ic：
2.1V @ 15V, 15A
Gate Charge：
32 nC
Reverse Recovery Time (trr)：
55 ns
Test Condition：
400V, 15A, 10Ohm, 15V
Td (on/off) @ 25°C：
18ns/64ns
Power - Max：
133 W
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：2578
quantity
unit price
International prices
1000
1.17
1170
2000
1.11
2220
5000
1.07
5350
10000
1.03
10300
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