SPP20N65C3XKSA1
MOSFET N-CH 650V 20.7A TO220-3
part Number：
SPP20N65C3XKSA1
Alternative Model：
IPP075N15N3GXKSA1
manufacturer：
IR (Infineon Technologies)
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 650V 20.7A TO220-3
RoHS：
YES
SPP20N65C3XKSA1 specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Package / Case：
TO-220-3
Drain to Source Voltage (Vdss)：
650 V
Input Capacitance (Ciss) (Max) @ Vds：
2400 pF @ 25 V
Supplier Device Package：
PG-TO220-3
Power Dissipation (Max)：
208W (Tc)
Gate Charge (Qg) (Max) @ Vgs：
114 nC @ 10 V
Vgs(th) (Max) @ Id：
3.9V @ 1mA
Current - Continuous Drain (Id) @ 25°C：
20.7A (Tc)
Rds On (Max) @ Id, Vgs：
190mOhm @ 13.1A, 10V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：2060
quantity
unit price
International prices
1
6.61
6.61
50
5.24
262
100
4.49
449
500
3.99
1995
1000
3.42
3420
2000
3.21
6420
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