TT8M1TR
MOSFET N/P-CH 20V 2.5A 8TSST
part Number:
TT8M1TR
Alternative Model:
D32G-016.368M,AFS20A42-1575.42-T3,SI5515CDC-T1-GE3,Q 0,032768-JTX310-12,5-10-T1-HMR-50K-LF,W25N512GVEIG,NTHD3100CT1G,EFM32HG310F64G-C-QFN32R,W25N01GVZEIG TR,DX07S016JA1R1500,416131160803,SML-D12U1WT86,BLM15HB221SH1D,MP-2016-1100-65-80,5023820670,PRTR5V0U2AX,235
manufacturer:
ROHM Semiconductor
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays >
describe:
MOSFET N/P-CH 20V 2.5A 8TSST
RoHS:
YES
TT8M1TR specifications
Mounting Type:
Surface Mount
Operating Temperature:
150°C (TJ)
Technology:
MOSFET (Metal Oxide)
Configuration:
N and P-Channel
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
2.5A
Power - Max:
1W
Vgs(th) (Max) @ Id:
1V @ 1mA
Supplier Device Package:
8-TSST
FET Feature:
Logic Level Gate, 1.5V Drive
Gate Charge (Qg) (Max) @ Vgs:
3.6nC @ 4.5V
Rds On (Max) @ Id, Vgs:
72mOhm @ 2.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
260pF @ 10V
Package / Case:
8-SMD, Flat Leads
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:10927
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