TT8U2TR
MOSFET P-CH 20V 2.4A 8TSST
TT8U2TR specifications
Mounting Type：
Surface Mount
Operating Temperature：
150°C (TJ)
Package / Case：
8-SMD, Flat Lead
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±10V
FET Type：
P-Channel
Drain to Source Voltage (Vdss)：
20 V
Drive Voltage (Max Rds On, Min Rds On)：
1.5V, 4.5V
Vgs(th) (Max) @ Id：
1V @ 1mA
Power Dissipation (Max)：
1.25W (Ta)
FET Feature：
Schottky Diode (Isolated)
Current - Continuous Drain (Id) @ 25°C：
2.4A (Ta)
Rds On (Max) @ Id, Vgs：
105mOhm @ 2.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs：
6.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds：
850 pF @ 10 V
Supplier Device Package：
8-TSST
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：1600
quantity
unit price
International prices
3000
0.18
540
6000
0.17
1020
9000
0.15
1350
30000
0.15
4500
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