R6076ENZ1C9
MOSFET N-CH 600V 76A TO247
part Number：
R6076ENZ1C9
Alternative Model：
R6076ENZ4C13
manufacturer：
ROHM Semiconductor
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 600V 76A TO247
RoHS：
YES
R6076ENZ1C9 specifications
Mounting Type：
Through Hole
Operating Temperature：
150°C (TJ)
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Drain to Source Voltage (Vdss)：
600 V
Package / Case：
TO-247-3
Vgs(th) (Max) @ Id：
4V @ 1mA
Supplier Device Package：
TO-247
Power Dissipation (Max)：
120W (Tc)
Current - Continuous Drain (Id) @ 25°C：
76A (Tc)
Input Capacitance (Ciss) (Max) @ Vds：
6500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs：
260 nC @ 10 V
Rds On (Max) @ Id, Vgs：
42mOhm @ 44.4A, 10V
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Standard Pack Quantity：1600
quantity
unit price
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