SIA466EDJ-T1-GE3
MOSFET N-CH 20V 25A PPAK SC70-6
part Number：
SIA466EDJ-T1-GE3
Alternative Model：
5P35023B-000NLGI,INA210AIDCKR,SIA430DJT-T1-GE3,SY58605UMG-TR,AP7380-50W5-7,155301VS73100,SSM6N7002CFU,LF,TLV271SN1T1G,PMEG6020EPA,115,RPX-1.0-R,155301YS73100,61301221021,742792651
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 20V 25A PPAK SC70-6
RoHS：
YES
SIA466EDJ-T1-GE3 specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Operating Temperature：
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id：
2.5V @ 250µA
Current - Continuous Drain (Id) @ 25°C：
25A (Tc)
Drain to Source Voltage (Vdss)：
20 V
Gate Charge (Qg) (Max) @ Vgs：
20 nC @ 10 V
Package / Case：
PowerPAK® SC-70-6
Supplier Device Package：
PowerPAK® SC-70-6
Power Dissipation (Max)：
3.5W (Ta), 19.2W (Tc)
Rds On (Max) @ Id, Vgs：
9.5mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds：
620 pF @ 1 V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：5218
quantity
unit price
International prices
3000
0.28
840
6000
0.25
1500
9000
0.24
2160
30000
0.23
6900
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