STH240N10F7-2
MOSFET N-CH 100V 180A H2PAK-2
part Number：
STH240N10F7-2
Alternative Model：
T541X156M063AH6710,STH315N10F7-2,LT8301IS5#TRPBF,STH310N10F7-2,SQJ423EP-T1_GE3,FDMS86263P,XC3S2000-4FG676I,FDV303N,NC7S04M5X-L22090,XLH536019.660000I,STP08DP05TTR,NTR5198NLT1G,AD8615AUJZ-REEL7,M24C32-RMN6TP,ADS7263SRHBR
manufacturer：
STMicroelectronics
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 100V 180A H2PAK-2
RoHS：
YES
STH240N10F7-2 specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drain to Source Voltage (Vdss)：
100 V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 175°C (TJ)
Vgs(th) (Max) @ Id：
4.5V @ 250µA
Package / Case：
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Power Dissipation (Max)：
300W (Tc)
Gate Charge (Qg) (Max) @ Vgs：
160 nC @ 10 V
Supplier Device Package：
H2PAK-2
Current - Continuous Drain (Id) @ 25°C：
180A (Tc)
Input Capacitance (Ciss) (Max) @ Vds：
11550 pF @ 25 V
Rds On (Max) @ Id, Vgs：
2.5mOhm @ 60A, 10V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：1600
quantity
unit price
International prices
1000
2.42
2420
2000
2.28
4560
5000
2.19
10950
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