STH260N6F6-6
MOSFET N-CH 60V 180A H2PAK-6
part Number：
STH260N6F6-6
Alternative Model：
SQM50P04-09L_GE3,IPB017N06N3GATMA1,PCV1J100MCL1GS
manufacturer：
STMicroelectronics
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 60V 180A H2PAK-6
RoHS：
YES
STH260N6F6-6 specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：
60 V
Vgs (Max)：
±20V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 175°C (TJ)
Vgs(th) (Max) @ Id：
4V @ 250µA
Power Dissipation (Max)：
300W (Tc)
Package / Case：
TO-263-7, D2PAK (6 Leads + Tab)
Current - Continuous Drain (Id) @ 25°C：
180A (Tc)
Supplier Device Package：
H2PAK-6
Input Capacitance (Ciss) (Max) @ Vds：
11800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs：
183 nC @ 10 V
Rds On (Max) @ Id, Vgs：
2.4mOhm @ 60A, 10V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：1600
quantity
unit price
International prices
1000
1.96
1960
2000
1.85
3700
5000
1.77
8850
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