STL11N65M5
MOSFET N-CH 650V 8.5A POWERFLAT
part Number：
STL11N65M5
Alternative Model：
TLE8082ESXUMA1,CY62177EV18LL-70BAXI,MIC2128YML-TR,MC3403DR2G,APDS-9006-020,MMPF0100F6ANES,CAT4139TD-GT3,SIR873DP-T1-GE3,NCV7748D2R2G,SIR610DP-T1-RE3,CY62167EV30LL-45ZXA,PGA204BU,CAT4237TD-GT3,SIA446DJ-T1-GE3,25LC256-I/P
manufacturer：
STMicroelectronics
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 650V 8.5A POWERFLAT
RoHS：
YES
STL11N65M5 specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Package / Case：
8-PowerVDFN
Vgs(th) (Max) @ Id：
5V @ 250µA
Drain to Source Voltage (Vdss)：
650 V
Vgs (Max)：
±25V
Gate Charge (Qg) (Max) @ Vgs：
17 nC @ 10 V
Power Dissipation (Max)：
70W (Tc)
Current - Continuous Drain (Id) @ 25°C：
8.5A (Tc)
Supplier Device Package：
PowerFLAT™ (5x5)
Rds On (Max) @ Id, Vgs：
530mOhm @ 4.25A, 10V
Input Capacitance (Ciss) (Max) @ Vds：
644 pF @ 100 V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：1600
quantity
unit price
International prices
3000
1.13
3390
6000
1.1
6600
9000
1.06
9540
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