IPB80N06S2LH5ATMA4
MOSFET N-CH 55V 80A TO263-3
part Number：
IPB80N06S2LH5ATMA4
Alternative Model：
IPB80N06S2L-H5
manufacturer：
IR (Infineon Technologies)
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 55V 80A TO263-3
RoHS：
YES
IPB80N06S2LH5ATMA4 specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Operating Temperature：
-55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss)：
55 V
Vgs(th) (Max) @ Id：
2V @ 250µA
Package / Case：
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Power Dissipation (Max)：
300W (Tc)
Current - Continuous Drain (Id) @ 25°C：
80A (Tc)
Supplier Device Package：
PG-TO263-3-2
Input Capacitance (Ciss) (Max) @ Vds：
5000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs：
190 nC @ 10 V
Rds On (Max) @ Id, Vgs：
4.7mOhm @ 80A, 10V
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