SQM120P06-07L_GE3
MOSFET P-CH 60V 120A TO263
part Number:
SQM120P06-07L_GE3
Alternative Model:
SUM110P06-08L-E3,AOB380A60CL,ADUM142D0BRZ,SUM110P06-07L-E3,MER1S4815SC,INA826AIDR,SUM110P08-11L-E3,7798,STD47N10F7AG,SQJ488EP-T1_GE3,MCB110P06Y-TP,7792,BUK9Y7R2-60E,115,C3D10060A,IXTA120P065T
manufacturer:
Vishay / Siliconix
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
MOSFET P-CH 60V 120A TO263
RoHS:
YES
SQM120P06-07L_GE3 specifications
Mounting Type:
Surface Mount
Technology:
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Drain to Source Voltage (Vdss):
60 V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
P-Channel
Supplier Device Package:
TO-263 (D2PAK)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Power Dissipation (Max):
375W (Tc)
Gate Charge (Qg) (Max) @ Vgs:
270 nC @ 10 V
Rds On (Max) @ Id, Vgs:
6.7mOhm @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds:
14280 pF @ 25 V
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:5082
quantity
unit price
International prices
800
2.32
1856
1600
1.99
3184
2400
1.87
4488
5600
1.79
10024
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