SSM6N56FE,LM
MOSFET 2N-CH 20V 0.8A ES6
part Number：
SSM6N56FE,LM
Alternative Model：
RB531SM-30T2R , M1MA151KT1G , SSM6L14FE(TE85L , F) , FDY302NZ , SSM6N35AFE , LF , SSM3K345R , LF , SI2301CDS-T1-GE3 , BLM18EG221SN1D , MT25QU512ABB8ESF-0SIT , SSM3J331R , LF , SSM6L56FE , LM , VZ30C1T8219732L , LM4040D41IDBZR , EZA-EG2A50AX , MAX40203AUK+T
manufacturer：
Toshiba Electronic Devices and Storage Corporation
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
FET, MOSFET Arrays >
describe：
MOSFET 2N-CH 20V 0.8A ES6
RoHS：
YES
SSM6N56FE,LM specifications
Mounting Type：
Surface Mount
Operating Temperature：
150°C (TJ)
Technology：
MOSFET (Metal Oxide)
Configuration：
2 N-Channel (Dual)
Power - Max：
150mW
Package / Case：
SOT-563, SOT-666
Supplier Device Package：
ES6
Drain to Source Voltage (Vdss)：
20V
Vgs(th) (Max) @ Id：
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：
1nC @ 4.5V
FET Feature：
Logic Level Gate, 1.5V Drive
Current - Continuous Drain (Id) @ 25°C：
800mA
Rds On (Max) @ Id, Vgs：
235mOhm @ 800mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds：
55pF @ 10V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：80192
quantity
unit price
International prices
4000
0.09
360
8000
0.09
720
12000
0.08
960
28000
0.07
1960
100000
0.06
6000
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