SQM100N10-10_GE3
MOSFET N-CH 100V 100A TO263
part Number:
SQM100N10-10_GE3
Alternative Model:
SQM100P10-19L_GE3,SQM40031EL_GE3,SQJQ112E-T1_GE3,PJ-082BH,SQM47N10-24L_GE3,SQR70090ELR_GE3,ZXTN2018FTA,IXFA130N10T2,IPB120N10S405ATMA1,SQM70060EL_GE3,SQS411ENW-T1_GE3,GG0603052R542P,2N3501UB,SUM90N10-8M2P-E3,ZXTP2027FTA
manufacturer:
Vishay / Siliconix
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
MOSFET N-CH 100V 100A TO263
RoHS:
YES
SQM100N10-10_GE3 specifications
Mounting Type:
Surface Mount
Grade:
Automotive
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Vgs (Max):
±20V
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Qualification:
AEC-Q101
Supplier Device Package:
TO-263 (D2PAK)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Power Dissipation (Max):
375W (Tc)
Rds On (Max) @ Id, Vgs:
10.5mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs:
185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds:
8050 pF @ 25 V
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:3301
quantity
unit price
International prices
800
1.99
1592
1600
1.71
2736
2400
1.61
3864
5600
1.54
8624
Kind reminder => Please fill out the form below. We will contact you as soon as possible.
corporate name:
Entercorporate name
Name:
EnterName
phone:
Enterphone
email:
Enteremail
quantity:
Enterquantity
describe:
Enterdescribe
Verification code:
Please enter the verification code