SQM120P04-04L_GE3
MOSFET P-CH 40V 120A TO263
part Number：
SQM120P04-04L_GE3
Alternative Model：
DMG1012UW-7 , SMMBTA42LT1G , IPD50N08S413ATMA1 , DMP1005UFDF-7 , DMN67D8LW-13 , PDSE1-S5-S5-S , LTC7804HMSE#PBF , SI4435FDY-T1-GE3 , CYPD4226-40LQXIT , PDSE1-S5-S3-S , NVTFS015N04CTAG , SQD90P04-9M4L_GE3 , TDP142IRNQT , MPQ4423AGQ-AEC1-Z , IPB180P04P403ATMA2
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET P-CH 40V 120A TO263
RoHS：
YES
SQM120P04-04L_GE3 specifications
Mounting Type：
Surface Mount
Grade：
Automotive
Technology：
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：
40 V
Current - Continuous Drain (Id) @ 25°C：
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Vgs(th) (Max) @ Id：
2.5V @ 250µA
Operating Temperature：
-55°C ~ 175°C (TJ)
FET Type：
P-Channel
Qualification：
AEC-Q101
Supplier Device Package：
TO-263 (D2PAK)
Package / Case：
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Power Dissipation (Max)：
375W (Tc)
Gate Charge (Qg) (Max) @ Vgs：
330 nC @ 10 V
Rds On (Max) @ Id, Vgs：
4mOhm @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds：
13980 pF @ 20 V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：2818
quantity
unit price
International prices
800
2.32
1856
1600
1.99
3184
2400
1.87
4488
5600
1.79
10024
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