TPW4R008NH,L1Q
MOSFET N-CH 80V 116A 8DSOP
part Number：
TPW4R008NH,L1Q
Alternative Model：
DMT10H010LPS-13,FDMC4435BZ,CZ3A05,TPH4R008NH,L1Q,LTC4311CSC6#TRPBF,TK3R1A04PL,S4X,LP5907MFX-2.5/NOPB,TK20N60W5,S1VF,TK72A12N1,S4X,TK11A65W,S5X
manufacturer：
Toshiba Electronic Devices and Storage Corporation
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 80V 116A 8DSOP
RoHS：
YES
：
TPW4R008NH,L1Q specifications
Mounting Type：
Surface Mount
Operating Temperature：
150°C (TJ)
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Package / Case：
8-PowerVDFN
Rds On (Max) @ Id, Vgs：
4mOhm @ 50A, 10V
Drain to Source Voltage (Vdss)：
80 V
Vgs(th) (Max) @ Id：
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：
59 nC @ 10 V
Power Dissipation (Max)：
800mW (Ta), 142W (Tc)
Supplier Device Package：
8-DSOP Advance
Current - Continuous Drain (Id) @ 25°C：
116A (Tc)
Input Capacitance (Ciss) (Max) @ Vds：
5300 pF @ 40 V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：1600
quantity
unit price
International prices
5000
1.24
6200
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