TPW4R50ANH,L1Q
MOSFET N-CH 100V 92A 8DSOP
part Number：
TPW4R50ANH,L1Q
Alternative Model：
BSC037N08NS5ATMA1,SM72295MAX/NOPB,TPW1R306PL,L1Q,BSC040N08NS5ATMA1,TPH4R50ANH1,LQ,IPT015N10N5ATMA1,XPW4R10ANB,L1XHQ,TPH3R70APL,L1Q,LT3753MPFE#PBF,BSC070N10LS5ATMA1,7461099,LT8650SIV#PBF,SSM6N815R,LF,NVMFWS3D6N10MCLT1G,IRS2184SPBF
manufacturer：
Toshiba Electronic Devices and Storage Corporation
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 100V 92A 8DSOP
RoHS：
YES
：
TPW4R50ANH,L1Q specifications
Mounting Type：
Surface Mount
Operating Temperature：
150°C (TJ)
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drain to Source Voltage (Vdss)：
100 V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Package / Case：
8-PowerVDFN
Vgs(th) (Max) @ Id：
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：
58 nC @ 10 V
Power Dissipation (Max)：
800mW (Ta), 142W (Tc)
Supplier Device Package：
8-DSOP Advance
Current - Continuous Drain (Id) @ 25°C：
92A (Tc)
Input Capacitance (Ciss) (Max) @ Vds：
5200 pF @ 50 V
Rds On (Max) @ Id, Vgs：
4.5mOhm @ 46A, 10V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：10351
quantity
unit price
International prices
5000
1.24
6200
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