SCT20N120
SICFET N-CH 1200V 20A HIP247
part Number：
SCT20N120
Alternative Model：
SCT20N120AG,SCT50N120,SCT3120ALGC11,SCT3160KLGC11,SCT30N120,C3M0160120D,SCTWA60N120G2-4,IGLD60R070D1AUMA3,LSIC1MO120E0080,SCT20N120H,SCT4062KEC11,LSIC1MO120E0160,SCTWA30N120,MSC750SMA170B,IMW120R350M1HXKSA1
manufacturer：
STMicroelectronics
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
SICFET N-CH 1200V 20A HIP247
RoHS：
YES
SCT20N120 specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Package / Case：
TO-247-3
Drain to Source Voltage (Vdss)：
1200 V
Drive Voltage (Max Rds On, Min Rds On)：
20V
Technology：
SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C：
20A (Tc)
Vgs (Max)：
+25V, -10V
Vgs(th) (Max) @ Id：
3.5V @ 1mA
Operating Temperature：
-55°C ~ 200°C (TJ)
Rds On (Max) @ Id, Vgs：
290mOhm @ 10A, 20V
Gate Charge (Qg) (Max) @ Vgs：
45 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds：
650 pF @ 400 V
Power Dissipation (Max)：
175W (Tc)
Supplier Device Package：
HiP247™
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：2099
quantity
unit price
International prices
1
18.07
18.07
30
14.63
438.9
120
13.76
1651.2
510
12.47
6359.7
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