SIHA12N50E-E3
MOSFET N-CH 500V 10.5A TO220
part Number:
SIHA12N50E-E3
Alternative Model:
SIHA12N50E-GE3
manufacturer:
Vishay / Siliconix
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
MOSFET N-CH 500V 10.5A TO220
RoHS:
YES
SIHA12N50E-E3 specifications
Mounting Type:
Through Hole
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On):
10V
Operating Temperature:
-55°C ~ 150°C (TJ)
Vgs (Max):
±30V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
50 nC @ 10 V
Package / Case:
TO-220-3 Full Pack
Supplier Device Package:
TO-220 Full Pack
Drain to Source Voltage (Vdss):
500 V
Current - Continuous Drain (Id) @ 25°C:
10.5A (Tc)
Rds On (Max) @ Id, Vgs:
380mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds:
886 pF @ 100 V
Power Dissipation (Max):
32W (Tc)
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:2595
quantity
unit price
International prices
1
2
2
10
1.66
16.6
100
1.32
132
500
1.12
560
1000
0.95
950
2000
0.9
1800
5000
0.87
4350
10000
0.84
8400
Kind reminder => Please fill out the form below. We will contact you as soon as possible.
corporate name:
Entercorporate name
Name:
EnterName
phone:
Enterphone
email:
Enteremail
quantity:
Enterquantity
describe:
Enterdescribe
Verification code:
Please enter the verification code