SIHB33N60EF-GE3
MOSFET N-CH 600V 33A D2PAK
part Number：
SIHB33N60EF-GE3
Alternative Model：
SIHP080N60E-GE3,SIHB30N60E-GE3,SIHB33N60E-GE3
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 600V 33A D2PAK
RoHS：
YES
SIHB33N60EF-GE3 specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Vgs (Max)：
±30V
Vgs(th) (Max) @ Id：
4V @ 250µA
Supplier Device Package：
TO-263 (D2PAK)
Package / Case：
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Drain to Source Voltage (Vdss)：
600 V
Power Dissipation (Max)：
278W (Tc)
Current - Continuous Drain (Id) @ 25°C：
33A (Tc)
Gate Charge (Qg) (Max) @ Vgs：
155 nC @ 10 V
Rds On (Max) @ Id, Vgs：
98mOhm @ 16.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds：
3454 pF @ 100 V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：2332
quantity
unit price
International prices
1
6.88
6.88
10
5.9
59
100
4.91
491
1000
3.91
3910
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