SIHP12N50E-GE3
MOSFET N-CH 500V 10.5A TO220AB
part Number：
SIHP12N50E-GE3
Alternative Model：
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 500V 10.5A TO220AB
RoHS：
YES
SIHP12N50E-GE3 specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Supplier Device Package：
TO-220AB
Package / Case：
TO-220-3
Vgs (Max)：
±30V
Vgs(th) (Max) @ Id：
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：
50 nC @ 10 V
Drain to Source Voltage (Vdss)：
500 V
Power Dissipation (Max)：
114W (Tc)
Current - Continuous Drain (Id) @ 25°C：
10.5A (Tc)
Rds On (Max) @ Id, Vgs：
380mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds：
886 pF @ 100 V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：1600
quantity
unit price
International prices
1
1.97
1.97
50
1.58
79
100
1.3
130
500
1.1
550
1000
0.94
940
2000
0.89
1780
5000
0.86
4300
10000
0.83
8300
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