SIHP20N50E-GE3
MOSFET N-CH 500V 19A TO220AB
part Number：
SIHP20N50E-GE3
Alternative Model：
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 500V 19A TO220AB
RoHS：
YES
SIHP20N50E-GE3 specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Supplier Device Package：
TO-220AB
Package / Case：
TO-220-3
Vgs (Max)：
±30V
Vgs(th) (Max) @ Id：
4V @ 250µA
Drain to Source Voltage (Vdss)：
500 V
Current - Continuous Drain (Id) @ 25°C：
19A (Tc)
Gate Charge (Qg) (Max) @ Vgs：
92 nC @ 10 V
Power Dissipation (Max)：
179W (Tc)
Input Capacitance (Ciss) (Max) @ Vds：
1640 pF @ 100 V
Rds On (Max) @ Id, Vgs：
184mOhm @ 10A, 10V
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