FGA50T65SHD
IGBT TRENCH/FS 650V 100A TO3PN
part Number：
FGA50T65SHD
Alternative Model：
NCD57000DWR2G,NCD5700DR2G
manufacturer：
Sanyo Semiconductor/onsemi
category：
Discrete Semiconductor Products >
Transistors >
IGBTs >
Single IGBTs >
describe：
IGBT TRENCH/FS 650V 100A TO3PN
RoHS：
YES
FGA50T65SHD specifications
Mounting Type：
Through Hole
Operating Temperature：
-55°C ~ 175°C (TJ)
IGBT Type：
Trench Field Stop
Package / Case：
TO-3P-3, SC-65-3
Input Type：
Standard
Current - Collector Pulsed (Icm)：
150 A
Voltage - Collector Emitter Breakdown (Max)：
650 V
Vce(on) (Max) @ Vge, Ic：
2.1V @ 15V, 50A
Current - Collector (Ic) (Max)：
100 A
Supplier Device Package：
TO-3PN
Gate Charge：
87 nC
Test Condition：
400V, 50A, 6Ohm, 15V
Power - Max：
319 W
Reverse Recovery Time (trr)：
34.6 ns
Switching Energy：
1.28mJ (on), 384µJ (off)
Td (on/off) @ 25°C：
22.4ns/73.6ns
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：2570
quantity
unit price
International prices
1
4.99
4.99
30
3.96
118.8
120
3.39
406.8
510
3.01
1535.1
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