IXTA1N200P3HV
MOSFET N-CH 2000V 1A TO263
part Number:
IXTA1N200P3HV
Alternative Model:
IXTT1N250HV,APT9M100S,IXTH3N200P3HV,STN0214,IXBK55N300,G2R1000MT17J,STW3N170,0ADAP4000-RE,IXTT2N300P3HV,IXBX55N300,IXTT1N300P3HV,DSPIC33FJ64MC802-I/MM,UF4010G_AY_00001,ZXGD3005E6TA,IXTA02N250HV,IXTA1N200P3HV-TRL
manufacturer:
Littelfuse / IXYS RF
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
MOSFET N-CH 2000V 1A TO263
RoHS:
YES
IXTA1N200P3HV specifications
Mounting Type:
Surface Mount
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Vgs (Max):
±20V
Drive Voltage (Max Rds On, Min Rds On):
10V
Operating Temperature:
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id:
4V @ 250µA
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Power Dissipation (Max):
125W (Tc)
Current - Continuous Drain (Id) @ 25°C:
1A (Tc)
Supplier Device Package:
TO-263AA
Gate Charge (Qg) (Max) @ Vgs:
23.5 nC @ 10 V
Drain to Source Voltage (Vdss):
2000 V
Rds On (Max) @ Id, Vgs:
40Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds:
646 pF @ 25 V
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:2752
quantity
unit price
International prices
1
10.35
10.35
50
8.26
413
100
7.39
739
500
6.52
3260
1000
5.87
5870
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