IXTH1N200P3
MOSFET N-CH 2000V 1A TO247
part Number：
IXTH1N200P3
Alternative Model：
STW3N170,IXTT02N450HV,IXTH1N250,IXTH1N200P3HV,NTBG1000N170M1,AQY210S,IXFP3N120,APV1121S,APT1608EC,FBMH4532HM681-T,BAV199W-7
manufacturer：
Littelfuse / IXYS RF
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 2000V 1A TO247
RoHS：
YES
IXTH1N200P3 specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id：
4V @ 250µA
Package / Case：
TO-247-3
Power Dissipation (Max)：
125W (Tc)
Current - Continuous Drain (Id) @ 25°C：
1A (Tc)
Supplier Device Package：
TO-247 (IXTH)
Gate Charge (Qg) (Max) @ Vgs：
23.5 nC @ 10 V
Drain to Source Voltage (Vdss)：
2000 V
Rds On (Max) @ Id, Vgs：
40Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds：
646 pF @ 25 V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：2274
quantity
unit price
International prices
1
9.31
9.31
30
7.44
223.2
120
6.64
796.8
510
5.86
2988.6
1020
5.28
5385.6
2010
4.95
9949.5
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