IXTH1N200P3HV
MOSFET N-CH 2000V 1A TO247HV
part Number：
IXTH1N200P3HV
Alternative Model：
G2R1000MT33J,IXTH3N200P3HV,ZXGD3005E6TA,IXTH02N250,R4000GPS-TP,5ST 10-R,1N4007FL,Z4KE100A-E3/54,CSV-PQ50/50-1S-12P,0217015.MXEP,PQ50/50-3C95,Z4KE150A-E3/54
manufacturer：
Littelfuse / IXYS RF
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 2000V 1A TO247HV
RoHS：
YES
IXTH1N200P3HV specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id：
4V @ 250µA
Power Dissipation (Max)：
125W (Tc)
Package / Case：
TO-247-3 Variant
Current - Continuous Drain (Id) @ 25°C：
1A (Tc)
Supplier Device Package：
TO-247HV
Gate Charge (Qg) (Max) @ Vgs：
23.5 nC @ 10 V
Drain to Source Voltage (Vdss)：
2000 V
Rds On (Max) @ Id, Vgs：
40Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds：
646 pF @ 25 V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：1877
quantity
unit price
International prices
1
9.97
9.97
30
7.95
238.5
120
7.12
854.4
510
6.28
3202.8
1020
5.65
5763
2010
5.29
10632.9
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