IRF100B202
MOSFET N-CH 100V 97A TO220AB
part Number:
IRF100B202
Alternative Model:
2EDF7275FXUMA2,IRFB4410ZPBF,2ED2103S06FXUMA1,PDSE1-S12-S12-S,IRF100B201,IRF1405PBF,1EDN7512BXTSA1,IRS10752LTRPBF,1ED44173N01BXTSA1,6EDL04N02PRXUMA1,IRS21271STRPBF,IRS4427STRPBF,2ED2184S06FXUMA1,2EDL23N06PJXUMA1,2ED2110S06MXUMA1
manufacturer:
IR (Infineon Technologies)
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
MOSFET N-CH 100V 97A TO220AB
RoHS:
YES
IRF100B202 specifications
Mounting Type:
Through Hole
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Vgs (Max):
±20V
Drain to Source Voltage (Vdss):
100 V
Drive Voltage (Max Rds On, Min Rds On):
10V
Supplier Device Package:
TO-220AB
Package / Case:
TO-220-3
Operating Temperature:
-55°C ~ 175°C (TJ)
Power Dissipation (Max):
221W (Tc)
Vgs(th) (Max) @ Id:
4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:
116 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C:
97A (Tc)
Rds On (Max) @ Id, Vgs:
8.6mOhm @ 58A, 10V
Input Capacitance (Ciss) (Max) @ Vds:
4476 pF @ 50 V
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:3600
quantity
unit price
International prices
1
2.35
2.35
10
1.96
19.6
100
1.55
155
500
1.32
660
1000
1.11
1110
2000
1.06
2120
5000
1.02
5100
10000
0.99
9900
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