SCT055W65G3-4AG

SCT055W65G3-4AG

Part number
SCT055W65G3-4AG
Product Categories
Single FETs, MOSFETs
Manufacturer
STMicroelectronics
Describe
TO247-4
Encapsulation
-
Package
Tube
ROHS status
Yes
Price
USD $8.8600
Data sheet
-
Quantity
RFQ
In stock:
Smallest : 600
Multiple : 1
Quantity
Unit price
Price
600
$8.8600
$5,316.0000
Alternative models
SCT055W65G3-4AG
意法-ST
Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an HiP247-4 package
Similar models
SCT055W65G3-4AG
意法-ST
Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an HiP247-4 package
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Purchase and inquiry
Specification
Transport
Data sheet
TYPEDESCRIPTION
MfrSTMicroelectronics
Series-
PackageTube
Product StatusACTIVE
Package / CaseTO-247-4
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 200°C (TJ)
TechnologySiC (Silicon Carbide Junction Transistor)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Rds On (Max) @ Id, Vgs72mOhm @ 15A, 18V
Power Dissipation (Max)210W (Tc)
Vgs(th) (Max) @ Id4.2V @ 1mA
Supplier Device PackageTO-247-4
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)15V, 18V
Vgs (Max)+18V, -5V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs32 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds721 pF @ 40 V
QualificationAEC-Q101

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