TP65H150G4LSG Single FETs, MOSFETs_Atla semiconductor_Capacitors_memory chip_passive component_semiconductor_PCB_integrated circuit _battery

TP65H150G4LSG

Part number

TP65H150G4LSG

Product Categories

Single FETs, MOSFETs

Manufacturer

Transphorm

Describe

GAN FET N-CH 650V PQFN

Encapsulation

Package

Tray

ROHS status

Price

USD $5.0600

Data sheet

Quantity

RFQ

Specification

Transport

Data sheet

TYPE	DESCRIPTION
Mfr	Transphorm
Series	-
Package	Tray
Product Status	ACTIVE
Package / Case	3-PowerTDFN
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	GaNFET (Gallium Nitride)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	13A (Tc)
Rds On (Max) @ Id, Vgs	180mOhm @ 8.5A, 10V
Power Dissipation (Max)	52W (Tc)
Vgs(th) (Max) @ Id	4.8V @ 500µA
Supplier Device Package	3-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	650 V
Gate Charge (Qg) (Max) @ Vgs	8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	598 pF @ 400 V

Shipping fee

Shipping starts at $40, but can be over $40 for some countries. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
Basic shipping charges (package ≤0.5kg or corresponding volume) depend on time zone and country.

Mailing method

Currently, our products are shipped via DHL, FedEx, SF and UPS.

Delivery time

Once the goods are shipped, the estimated delivery time depends on the shipping method you choose:

FedEx International, 5-7 business days.

The following are logistics times for some common countries.

transport