AS1M025120P
AS1M025120P
Part number
AS1M025120P
Product Categories
Single FETs, MOSFETs
Manufacturer
Anbon Semiconductor
Describe
N-CHANNEL SILICON CARBIDE POWER
Encapsulation
-
Package
Tube
ROHS status
Yes
Price
USD $38.0300
Data sheet
Quantity
RFQ
In stock:
Smallest : 30
Multiple : 1
Quantity
Unit price
Price
1
$38.0300
$38.0300
10
$33.8000
$338.0000
100
$29.5600
$2,956.0000
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Purchase and inquiry
Specification
Transport
Data sheet
ABLIC U.S.A. Inc. S-1132B33-I6T2U has similar specifications, properties, parameters and parts as ABLIC U.S.A. Inc. S-1132B33-I6T2U.
TYPEDESCRIPTION
MfrAnbon Semiconductor
Series-
PackageTube
Product StatusACTIVE
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologySiCFET (Silicon Carbide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Rds On (Max) @ Id, Vgs34mOhm @ 50A, 20V
Power Dissipation (Max)463W (Tc)
Vgs(th) (Max) @ Id4V @ 15mA
Supplier Device PackageTO-247-3
Drive Voltage (Max Rds On, Min Rds On)20V
Vgs (Max)+25V, -10V
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs195 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds3600 pF @ 1000 V

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