G3K8N15HE
G3K8N15HE
Part number
G3K8N15HE
Product Categories
Single FETs, MOSFETs
Manufacturer
Goford Semiconductor
Describe
MOSFET N-CH ESD 150V 2A SOT-223
Encapsulation
-
Package
Tape & Reel (TR)
ROHS status
Yes
Price
USD $0.1100
Data sheet
Quantity
RFQ
In stock:
Smallest : 2500
Multiple : 1
Quantity
Unit price
Price
2500
$0.1100
$275.0000
15000
$0.1000
$1,500.0000
30000
$0.0900
$2,700.0000
Alternative models
G3K8N15HE
谷峰-GOFORD
Trench Mosfet
Similar models
G3K8N15HE
谷峰-GOFORD
Trench Mosfet
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Purchase and inquiry
Specification
Transport
Data sheet
ABLIC U.S.A. Inc. S-1132B33-I6T2U has similar specifications, properties, parameters and parts as ABLIC U.S.A. Inc. S-1132B33-I6T2U.
TYPEDESCRIPTION
MfrGoford Semiconductor
Series-
PackageTape & Reel (TR)
Product StatusACTIVE
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C2A (Tc)
Rds On (Max) @ Id, Vgs370mOhm @ 2A, 10V
Power Dissipation (Max)2.16W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageSOT-223
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)150 V
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds558 pF @ 75 V

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