TW015Z120C,S1F TW015Z120C,S1F
TW015Z120C,S1F
Part number
TW015Z120C,S1F
Product Categories
Single FETs, MOSFETs
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Describe
G3 1200V SIC-MOSFET TO-247-4L 1
Encapsulation
-
Package
Tube
ROHS status
Yes
Price
USD $61.3300
Data sheet
Quantity
RFQ
In stock:
Smallest : 30
Multiple : 1
Quantity
Unit price
Price
1
$61.3300
$61.3300
30
$53.8900
$1,616.7000
120
$50.1800
$6,021.6000
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Purchase and inquiry
Specification
Transport
Data sheet
ABLIC U.S.A. Inc. S-1132B33-I6T2U has similar specifications, properties, parameters and parts as ABLIC U.S.A. Inc. S-1132B33-I6T2U.
TYPEDESCRIPTION
MfrToshiba Electronic Devices and Storage Corporation
Series-
PackageTube
Product StatusACTIVE
Package / CaseTO-247-4
Mounting TypeThrough Hole
Operating Temperature175°C
TechnologySiC (Silicon Carbide Junction Transistor)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Rds On (Max) @ Id, Vgs21mOhm @ 50A, 18V
Power Dissipation (Max)431W (Tc)
Vgs(th) (Max) @ Id5V @ 11.7mA
Supplier Device PackageTO-247-4L(X)
Drive Voltage (Max Rds On, Min Rds On)18V
Vgs (Max)+25V, -10V
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs158 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds6000 pF @ 800 V

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FedEx International, 5-7 business days.

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transport

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