IXTA3N120-TRL
MOSFET N-CH 1200V 3A TO263
part Number:
IXTA3N120-TRL
Alternative Model:
IXTA3N120,IXFA6N120P,IXTA3N120-TRR,IPD60R180P7SAUMA1,IXTP3N120,SCT3160KLGC11,IXTA3N150HV,IXTA3N120HV,STPSC10H065B-TR,STH2N120K5-2AG,AD8607ARMZ-REEL,G3R450MT17J,G3R350MT12D,1EDN7512BXTSA1,SCT20N120H,IXTA3N120,IXTA3N120-TRR
manufacturer:
Littelfuse / IXYS RF
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
MOSFET N-CH 1200V 3A TO263
RoHS:
YES
IXTA3N120-TRL specifications
Mounting Type:
Surface Mount
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Vgs (Max):
±20V
Drive Voltage (Max Rds On, Min Rds On):
10V
Operating Temperature:
-55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C:
3A (Tc)
Vgs(th) (Max) @ Id:
5V @ 250µA
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Drain to Source Voltage (Vdss):
1200 V
Gate Charge (Qg) (Max) @ Vgs:
42 nC @ 10 V
Supplier Device Package:
TO-263AA
Input Capacitance (Ciss) (Max) @ Vds:
1350 pF @ 25 V
Power Dissipation (Max):
200W (Tc)
Rds On (Max) @ Id, Vgs:
4.5Ohm @ 1.5A, 10V
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:1600
quantity
unit price
International prices
800
5.63
4504
1600
5.07
8112
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