SI4386DY-T1-E3
MOSFET N-CH 30V 11A 8SO
part Number：
SI4386DY-T1-E3
Alternative Model：
ESP32-U4WDH,DMN3007LSSQ-13,SISA26DN-T1-GE3,MP3428AGL-Z,AO4430,PJ-002AH,ABM11W-40.0000MHZ-8-D1X-T3,SPX1587AT-L-3-3/TR,W25X20CLSNIG,USBLC6-2SC6,BSC046N02KSGAUMA1,2N7002LT1G
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 30V 11A 8SO
RoHS：
YES
SI4386DY-T1-E3 specifications
Mounting Type：
Surface Mount
Supplier Device Package：
8-SOIC
Package / Case：
8-SOIC (0.154", 3.90mm Width)
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Operating Temperature：
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id：
2.5V @ 250µA
Drain to Source Voltage (Vdss)：
30 V
Current - Continuous Drain (Id) @ 25°C：
11A (Ta)
Gate Charge (Qg) (Max) @ Vgs：
18 nC @ 4.5 V
Power Dissipation (Max)：
1.47W (Ta)
Rds On (Max) @ Id, Vgs：
7mOhm @ 16A, 10V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：4740
quantity
unit price
International prices
2500
0.62
1550
5000
0.58
2900
12500
0.55
6875
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