SI6459BDQ-T1-E3
MOSFET P-CH 60V 2.2A 8TSSOP
part Number:
SI6459BDQ-T1-E3
Alternative Model:
manufacturer:
Vishay / Siliconix
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
MOSFET P-CH 60V 2.2A 8TSSOP
RoHS:
YES
SI6459BDQ-T1-E3 specifications
Mounting Type:
Surface Mount
Package / Case:
8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package:
8-TSSOP
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Vgs (Max):
±20V
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Vgs(th) (Max) @ Id:
3V @ 250µA
Power Dissipation (Max):
1W (Ta)
Gate Charge (Qg) (Max) @ Vgs:
22 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C:
2.2A (Ta)
Rds On (Max) @ Id, Vgs:
115mOhm @ 2.7A, 10V
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:1600
quantity
unit price
International prices
3000
0.45
1350
6000
0.43
2580
9000
0.42
3780
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