SI7100DN-T1-E3
MOSFET N-CH 8V 35A PPAK1212-8
part Number：
SI7100DN-T1-E3
Alternative Model：
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 8V 35A PPAK1212-8
RoHS：
YES
SI7100DN-T1-E3 specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Operating Temperature：
-50°C ~ 150°C (TJ)
Supplier Device Package：
PowerPAK® 1212-8
Package / Case：
PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On)：
2.5V, 4.5V
Vgs (Max)：
±8V
Vgs(th) (Max) @ Id：
1V @ 250µA
Drain to Source Voltage (Vdss)：
8 V
Current - Continuous Drain (Id) @ 25°C：
35A (Tc)
Power Dissipation (Max)：
3.8W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs：
3.5mOhm @ 15A, 4.5V
Gate Charge (Qg) (Max) @ Vgs：
105 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds：
3810 pF @ 4 V
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Standard Pack Quantity：1600
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