SI7115DN-T1-GE3
MOSFET P-CH 150V 8.9A PPAK1212-8
part Number：
SI7115DN-T1-GE3
Alternative Model：
FDMC86261P,DGH106Q2R7,SI7115DN-T1-E3,SI7119DN-T1-GE3,BZX84-C12,215,IRFR6215TRPBF,SI7113DN-T1-E3,2N7002DWH6327XTSA1,SI7489DP-T1-GE3,HMC427ALP3ETR,MC74LCX245DTR2G,APG0603SYC-TT,ACS781LLRTR-050B-T,MMSZ5240BS-7-F,NLVHC4851ADR2G
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET P-CH 150V 8.9A PPAK1212-8
RoHS：
YES
SI7115DN-T1-GE3 specifications
Mounting Type：
Surface Mount
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
6V, 10V
Vgs (Max)：
±20V
FET Type：
P-Channel
Operating Temperature：
-50°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id：
4V @ 250µA
Supplier Device Package：
PowerPAK® 1212-8
Package / Case：
PowerPAK® 1212-8
Drain to Source Voltage (Vdss)：
150 V
Input Capacitance (Ciss) (Max) @ Vds：
1190 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs：
42 nC @ 10 V
Power Dissipation (Max)：
3.7W (Ta), 52W (Tc)
Current - Continuous Drain (Id) @ 25°C：
8.9A (Tc)
Rds On (Max) @ Id, Vgs：
295mOhm @ 4A, 10V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：8348
quantity
unit price
International prices
3000
0.99
2970
6000
0.96
5760
9000
0.92
8280
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