SI7716ADN-T1-GE3
MOSFET N-CH 30V 16A PPAK1212-8
part Number：
SI7716ADN-T1-GE3
Alternative Model：
SSM6J507NU,LF,SI2324DS-T1-GE3,SI2347DS-T1-GE3,SIR426DP-T1-GE3,SIS434DN-T1-GE3,SI2304DDS-T1-GE3,QBLP601-IG,DMG3402L-7,PMF170XP,115,SI7121DN-T1-GE3,EX-14A,SK38A-LTP,SI1902DL-T1-GE3,GBPC2506,SI7450DP-T1-E3
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 30V 16A PPAK1212-8
RoHS：
YES
SI7716ADN-T1-GE3 specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Operating Temperature：
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id：
2.5V @ 250µA
Drain to Source Voltage (Vdss)：
30 V
Supplier Device Package：
PowerPAK® 1212-8
Package / Case：
PowerPAK® 1212-8
Current - Continuous Drain (Id) @ 25°C：
16A (Tc)
Gate Charge (Qg) (Max) @ Vgs：
23 nC @ 10 V
Power Dissipation (Max)：
3.5W (Ta), 27.7W (Tc)
Rds On (Max) @ Id, Vgs：
13.5mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds：
846 pF @ 15 V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：12647
quantity
unit price
International prices
3000
0.54
1620
6000
0.52
3120
9000
0.48
4320
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