SI4842BDY-T1-GE3
MOSFET N-CH 30V 28A 8SO
part Number：
SI4842BDY-T1-GE3
Alternative Model：
SHF-104-01-L-D-SM,CP2102N-A02-GQFN20R,FL2500316Z,AWHW 10G-0202-T,SI4842BDY-T1-E3,MAX6753KA26+T,SHF-105-01-L-D-SM-LC-K-TR,88E1512-A0-NNP2I000,SN74AVC1T45DCKT,KC2520Z100.000C1KX00,7M48072002,TDA04H0SB1R,PESD5V0C1BSFYL,2134536-2,XZCM2CRK53WA-1VF
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 30V 28A 8SO
RoHS：
YES
SI4842BDY-T1-GE3 specifications
Mounting Type：
Surface Mount
Supplier Device Package：
8-SOIC
Package / Case：
8-SOIC (0.154", 3.90mm Width)
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Operating Temperature：
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)：
30 V
Vgs(th) (Max) @ Id：
3V @ 250µA
Current - Continuous Drain (Id) @ 25°C：
28A (Tc)
Gate Charge (Qg) (Max) @ Vgs：
100 nC @ 10 V
Rds On (Max) @ Id, Vgs：
4.2mOhm @ 20A, 10V
Power Dissipation (Max)：
3W (Ta), 6.25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds：
3650 pF @ 15 V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：3153
quantity
unit price
International prices
2500
1.17
2925
5000
1.12
5600
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