SI6423DQ-T1-GE3
MOSFET P-CH 12V 8.2A 8TSSOP
part Number:
SI6423DQ-T1-GE3
Alternative Model:
NDC7001C,FTSH-105-01-F-D-RA-K,SI6423DQ-T1-E3,SI2302CDS-T1-E3,BZG03C82-M3-08,LT8631EFE#PBF,SI6415DQ-T1-GE3,SI7938DP-T1-GE3,SI2366DS-T1-GE3,TFM-130-12-L-D-A-P-TR,LTC3129EMSE#PBF,NCP81075MNTXG,SMP1322-005LF,XC7S25-1CSGA324C,SI4116DY-T1-GE3
manufacturer:
Vishay / Siliconix
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
MOSFET P-CH 12V 8.2A 8TSSOP
RoHS:
YES
SI6423DQ-T1-GE3 specifications
Mounting Type:
Surface Mount
Package / Case:
8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package:
8-TSSOP
Technology:
MOSFET (Metal Oxide)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Drain to Source Voltage (Vdss):
12 V
Vgs (Max):
±8V
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C:
8.2A (Ta)
Power Dissipation (Max):
1.05W (Ta)
Gate Charge (Qg) (Max) @ Vgs:
110 nC @ 5 V
Rds On (Max) @ Id, Vgs:
8.5mOhm @ 9.5A, 4.5V
Vgs(th) (Max) @ Id:
800mV @ 400µA
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:9056
quantity
unit price
International prices
3000
0.85
2550
6000
0.81
4860
9000
0.78
7020
Kind reminder => Please fill out the form below. We will contact you as soon as possible.
corporate name:
Entercorporate name
Name:
EnterName
phone:
Enterphone
email:
Enteremail
quantity:
Enterquantity
describe:
Enterdescribe
Verification code:
Please enter the verification code