SI7106DN-T1-GE3
MOSFET N-CH 20V 12.5A PPAK1212-8
part Number：
SI7106DN-T1-GE3
Alternative Model：
AON7404,SI7106DN-T1-E3
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 20V 12.5A PPAK1212-8
RoHS：
YES
SI7106DN-T1-GE3 specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Operating Temperature：
-55°C ~ 150°C (TJ)
Power Dissipation (Max)：
1.5W (Ta)
Supplier Device Package：
PowerPAK® 1212-8
Package / Case：
PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On)：
2.5V, 4.5V
Drain to Source Voltage (Vdss)：
20 V
Vgs (Max)：
±12V
Vgs(th) (Max) @ Id：
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：
27 nC @ 4.5 V
Current - Continuous Drain (Id) @ 25°C：
12.5A (Ta)
Rds On (Max) @ Id, Vgs：
6.2mOhm @ 19.5A, 4.5V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：2272
quantity
unit price
International prices
3000
0.68
2040
6000
0.65
3900
9000
0.63
5670
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