SI7113DN-T1-GE3
MOSFET P-CH 100V 13.2A PPAK
part Number：
SI7113DN-T1-GE3
Alternative Model：
SI7113DN-T1-E3,BC807-40-7-F,2N7002,215,BLM18PG331SN1D,SZMMSZ5246BT1G,SI7113ADN-T1-GE3,SQSA80ENW-T1_GE3,QPC02SXGN-RC,SISS71DN-T1-GE3,DSC1001DL5-030.0000,SISS63DN-T1-GE3,SQ2361ES-T1_GE3,MMSZ5246B-7-F,BLM18PG471SH1D,MSL0104RGBU1
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET P-CH 100V 13.2A PPAK
RoHS：
YES
SI7113DN-T1-GE3 specifications
Mounting Type：
Surface Mount
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Drain to Source Voltage (Vdss)：
100 V
FET Type：
P-Channel
Operating Temperature：
-50°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id：
3V @ 250µA
Supplier Device Package：
PowerPAK® 1212-8
Package / Case：
PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs：
55 nC @ 10 V
Power Dissipation (Max)：
3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds：
1480 pF @ 50 V
Current - Continuous Drain (Id) @ 25°C：
13.2A (Tc)
Rds On (Max) @ Id, Vgs：
134mOhm @ 4A, 10V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：12753
quantity
unit price
International prices
3000
0.73
2190
6000
0.69
4140
9000
0.66
5940
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