2SK3700(F)
MOSFET N-CH 900V 5A TO3P
part Number：
2SK3700(F)
Alternative Model：
UC3844BN
manufacturer：
Toshiba Electronic Devices and Storage Corporation
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 900V 5A TO3P
RoHS：
YES
2SK3700(F) specifications
Mounting Type：
Through Hole
Operating Temperature：
150°C (TJ)
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Power Dissipation (Max)：
150W (Tc)
Package / Case：
TO-3P-3, SC-65-3
Gate Charge (Qg) (Max) @ Vgs：
28 nC @ 10 V
Vgs(th) (Max) @ Id：
4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds：
1150 pF @ 25 V
Drain to Source Voltage (Vdss)：
900 V
Current - Continuous Drain (Id) @ 25°C：
5A (Ta)
Supplier Device Package：
TO-3P(N)
Rds On (Max) @ Id, Vgs：
2.5Ohm @ 3A, 10V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：1603
quantity
unit price
International prices
1
2.56
2.56
10
2.13
21.3
25
2.06
51.5
100
1.69
169
300
1.65
495
500
1.43
715
1000
1.22
1220
2400
1.16
2784
4900
1.11
5439
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