SSM6J212FE,LF
MOSFET P-CH 20V 4A ES6
part Number：
SSM6J212FE,LF
Alternative Model：
R1EX24064ATAS0I#S0,ASMB-TTF0-0A20B,SSM6K202FE,LF,SSM6K211FE,LF,ACM2012-361-2P-T002,ULN2002D1013TR
manufacturer：
Toshiba Electronic Devices and Storage Corporation
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET P-CH 20V 4A ES6
RoHS：
YES
SSM6J212FE,LF specifications
Mounting Type：
Surface Mount
Operating Temperature：
150°C (TJ)
Technology：
MOSFET (Metal Oxide)
FET Type：
P-Channel
Drain to Source Voltage (Vdss)：
20 V
Vgs (Max)：
±8V
Drive Voltage (Max Rds On, Min Rds On)：
1.5V, 4.5V
Package / Case：
SOT-563, SOT-666
Supplier Device Package：
ES6
Current - Continuous Drain (Id) @ 25°C：
4A (Ta)
Power Dissipation (Max)：
500mW (Ta)
Vgs(th) (Max) @ Id：
1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds：
970 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs：
14.1 nC @ 4.5 V
Rds On (Max) @ Id, Vgs：
40.7mOhm @ 3A, 4.5V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：1600
quantity
unit price
International prices
4000
0.15
600
8000
0.15
1200
12000
0.14
1680
28000
0.14
3920
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