SI6473DQ-T1-E3
MOSFET P-CH 20V 6.2A 8TSSOP
part Number：
SI6473DQ-T1-E3
Alternative Model：
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET P-CH 20V 6.2A 8TSSOP
RoHS：
YES
SI6473DQ-T1-E3 specifications
Mounting Type：
Surface Mount
Package / Case：
8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package：
8-TSSOP
Technology：
MOSFET (Metal Oxide)
Operating Temperature：
-55°C ~ 150°C (TJ)
FET Type：
P-Channel
Drain to Source Voltage (Vdss)：
20 V
Vgs (Max)：
±8V
Drive Voltage (Max Rds On, Min Rds On)：
1.8V, 4.5V
Vgs(th) (Max) @ Id：
450mV @ 250µA (Min)
Current - Continuous Drain (Id) @ 25°C：
6.2A (Ta)
Power Dissipation (Max)：
1.08W (Ta)
Rds On (Max) @ Id, Vgs：
12.5mOhm @ 9.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs：
70 nC @ 5 V
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Standard Pack Quantity：1600
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