SI7114ADN-T1-GE3
MOSFET N-CH 30V 35A PPAK 1212-8
part Number：
SI7114ADN-T1-GE3
Alternative Model：
TCPP02-M18,RT7258GSP,BZD27C27P-E3-08,SI3499DV-T1-GE3,TPS2051BDBVR,DMP10H400SEQ-13,ESD7C3.3DT5G,SZMM5Z8V2ST1G,PH9408.364NLT,TPD4E02B04DQAR,STM32G071GBU6N,RCLAMP0524PATCT,SZMM5Z4V7ST5G,IRFS4321TRLPBF,SKRAAKE010
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 30V 35A PPAK 1212-8
RoHS：
YES
SI7114ADN-T1-GE3 specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Operating Temperature：
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id：
2.5V @ 250µA
Drain to Source Voltage (Vdss)：
30 V
Supplier Device Package：
PowerPAK® 1212-8
Package / Case：
PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs：
32 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C：
35A (Tc)
Input Capacitance (Ciss) (Max) @ Vds：
1230 pF @ 15 V
Power Dissipation (Max)：
3.7W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs：
7.5mOhm @ 18A, 10V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：23206
quantity
unit price
International prices
3000
0.33
990
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