SI7115DN-T1-E3
MOSFET P-CH 150V 8.9A PPAK1212-8
part Number：
SI7115DN-T1-E3
Alternative Model：
SI7115DN-T1-GE3,SF-0603F300-2,SISS5710DN-T1-GE3,SISS72DN-T1-GE3,SIR873DP-T1-GE3,FDMC86262P,EPC2010C,FDMC86261P,SI7315DN-T1-GE3,ADP3624ARHZ-RL,SIT5156AI-FA-25E0-25.000000,M2GL010-VFG256I,LD39200PUR,BZT52C9V1-7-F,T2M-110-01-L-D-RA-WT
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET P-CH 150V 8.9A PPAK1212-8
RoHS：
YES
SI7115DN-T1-E3 specifications
Mounting Type：
Surface Mount
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
6V, 10V
Vgs (Max)：
±20V
FET Type：
P-Channel
Operating Temperature：
-50°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id：
4V @ 250µA
Supplier Device Package：
PowerPAK® 1212-8
Package / Case：
PowerPAK® 1212-8
Drain to Source Voltage (Vdss)：
150 V
Input Capacitance (Ciss) (Max) @ Vds：
1190 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs：
42 nC @ 10 V
Power Dissipation (Max)：
52W (Tc)
Current - Continuous Drain (Id) @ 25°C：
8.9A (Tc)
Rds On (Max) @ Id, Vgs：
295mOhm @ 4A, 10V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：10616
quantity
unit price
International prices
3000
0.99
2970
6000
0.96
5760
9000
0.92
8280
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