SI7117DN-T1-GE3
MOSFET P-CH 150V 2.17A PPAK
part Number：
SI7117DN-T1-GE3
Alternative Model：
FDMC2523P,SI7119DN-T1-GE3
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET P-CH 150V 2.17A PPAK
RoHS：
YES
SI7117DN-T1-GE3 specifications
Mounting Type：
Surface Mount
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
6V, 10V
Vgs (Max)：
±20V
Operating Temperature：
-55°C ~ 150°C (TJ)
FET Type：
P-Channel
Vgs(th) (Max) @ Id：
4.5V @ 250µA
Supplier Device Package：
PowerPAK® 1212-8
Package / Case：
PowerPAK® 1212-8
Drain to Source Voltage (Vdss)：
150 V
Gate Charge (Qg) (Max) @ Vgs：
12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds：
510 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C：
2.17A (Tc)
Rds On (Max) @ Id, Vgs：
1.2Ohm @ 500mA, 10V
Power Dissipation (Max)：
3.2W (Ta), 12.5W (Tc)
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：3598
quantity
unit price
International prices
3000
0.57
1710
6000
0.55
3300
9000
0.53
4770
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